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L6726ATR 数据表(PDF) 18 Page - STMicroelectronics |
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L6726ATR 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 24 page ![]() Application details L6726A 18/24 The previous equation refers only to VOUT ramp up time. The time elapsed from the end of OC setting phase or COMP set free to the beginning of VOUT ramp up (see Figure 6) can be approximately estimated as follow: Once calculated tSS, also the current delivered by the converter during SS to charge the output capacitor bank can be estimated: 8.4 Layout guidelines L6726A provides control functions and high current integrated drivers to implement high- current step-down DC-DC converters. In this kind of application, a good layout is very important. The first priority when placing components for these applications has to be reserved to the power section, minimizing the length of each connection and loop as much as possible. To minimize noise and voltage spikes (EMI and losses) power connections (highlighted in Figure 10) must be a part of a power plane and anyway realized by wide and thick copper traces: loop must be anyway minimized. The critical components, i.e. the power MOSFETs, must be close one to the other. The use of multi-layer printed circuit board is recommended. Figure 10. Power Connections (heavy lines) The input capacitance (CIN), or at least a portion of the total capacitance needed, has to be placed close to the power section in order to eliminate the stray inductance generated by the copper traces. Low ESR and ESL capacitors are preferred, MLCC are suggested to be connected near the HS drain. Use proper VIAs number when power traces have to move between different planes on the PCB in order to reduce both parasitic resistance and inductance. Moreover, reproducing the same high-current trace on more than one PCB layer will reduce the parasitic resistance associated to that connection. Connect output bulk capacitors (COUT) as near as possible to the load, minimizing parasitic inductance and resistance associated to the copper trace, also adding extra decoupling capacitors along the way to the load when this results in being far from the bulk capacitors bank. Gate traces and phase trace must be sized according to the driver RMS current delivered to the power MOSFET. The device robustness allows managing applications with the power t delay C F 0.8V ⋅ I SS --------------------------- = I startup C OUT V OUT ⋅ t SS ------------------------------------- = L CIN VIN UGATE PHASE LGATE GND LOAD L6726A COUT |
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