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L6726ATR 数据表(PDF) 19 Page - STMicroelectronics |
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L6726ATR 数据表(HTML) 19 Page - STMicroelectronics |
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19 / 24 page ![]() L6726A Application details 19/24 section far from the controller without losing performances. Anyway, when possible, it is recommended to minimize the distance between controller and power section. See Figure 11 for drivers current paths. Small signal components and connections to critical nodes of the application, as well as bypass capacitors for the device supply, are also important. Locate bypass capacitor (VCC and Bootstrap capacitor) and loop compensation components as close to the device as practical. For over current programmability, place ROCSET close to the device and avoid leakage current paths on LGATE / OC pin, since the internal current source is only 10 µA Systems that do not use Schottky diode in parallel to the Low-Side MOSFET might show big negative spikes on the PHASE pin. This spike must be limited within the absolute maximum ratings (for example, adding a gate resistor in series to HS MOSFET gate, or a phase resistor in series to PHASE pin), as well as the positive spike, but has an additional consequence: it causes the bootstrap capacitor to be over-charged. This extra-charge can cause, in the worst case condition of maximum input voltage and during particular transients, that boot-to-phase voltage overcomes the absolute maximum ratings also causing device failures. It is then suggested in this case to limit this extra-charge by adding a small resistor in series to the bootstrap diode (RD in Figure 1). Figure 11. Drivers turn-on and turn-off paths RGATE RINT CGD CGS CDS VCC LS DRIVER LS MOSFET GND LGATE RGATE RINT CGD CGS CDS BOOT HS DRIVER HS MOSFET PHASE UGATE RPHASE |
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