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M28W640FCT 数据表(PDF) 36 Page - STMicroelectronics

部件名 M28W640FCT
功能描述  64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory
PDF  77 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M28W640FCT 数据表(HTML) 36 Page - STMicroelectronics

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DC and AC parameters
M28W640FCT, M28W640FCB
36/77
Table 15.
DC characteristics
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤V
IN ≤VDDQ
±1
µA
ILO
Output Leakage Current
0V≤VOUT ≤VDDQ
±10
µA
IDD
Supply Current (Read)
E = VSS, G = VIH,
f = 5MHz
918
mA
IDD1
Supply Current (Stand-by or
Automatic Stand-by)
E = VDDQ ± 0.2V,
RP = VDDQ ± 0.2V
15
50
µA
IDD2
Supply Current (Reset)
RP = VSS ± 0.2V
15
50
µA
IDD3
Supply Current (Program)
Program in progress
VPP = 12V ± 5%
510
mA
Program in progress
VPP = VDD
10
20
mA
IDD4
Supply Current (Erase)
Erase in progress
VPP = 12V ± 5%
520
mA
Erase in progress
VPP = VDD
10
20
mA
IDD5
Supply Current
(Program/Erase Suspend)
E = VDDQ ± 0.2V,
Erase suspended
15
50
µA
IPP
Program Current
(Read or Stand-by)
VPP > VDD
400
µA
IPP1
Program Current
(Read or Stand-by)
VPP ≤VDD
15
µA
IPP2
Program Current (Reset)
RP = VSS ± 0.2V
1
5
µA
IPP3
Program Current (Program)
Program in progress
VPP = 12V ± 5%
110
mA
Program in progress
VPP = VDD
15
µA
IPP4
Program Current (Erase)
Erase in progress
VPP = 12V ± 5%
310
mA
Erase in progress
VPP = VDD
15
µA
VIL
Input Low voltage
–0.5
0.4
V
VDDQ ≥ 2.7V
–0.5
0.8
V
VIH
Input High voltage
VDDQ –0.4
VDDQ +0.4
V
VDDQ ≥ 2.7V
0.7 VDDQ
VDDQ +0.4
V
VOL
Output Low voltage
IOL = 100µA,
VDD = VDD min,
VDDQ = VDDQ min
0.1
V
VOH
Output High voltage
IOH = –100µA,
VDD = VDD min,
VDDQ = VDDQ min
VDDQ –0.1
V



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