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M28W640FCT 数据表(PDF) 42 Page - STMicroelectronics |
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M28W640FCT 数据表(HTML) 42 Page - STMicroelectronics |
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42 / 77 page  DC and AC parameters M28W640FCT, M28W640FCB 42/77 Table 18. Write AC characteristics, Chip enable controlled Symbol Alt Parameter M28W640FCT, M28W640FCB Unit 70 85 90 10 tAVAV tWC Write Cycle Time Min 70 85 90 100 ns tAVEH tAS Address Valid to Chip Enable High Min 454550 50 ns tDVEH tDS Data Valid to Chip Enable High Min 45 45 50 50 ns tEHAX tAH Chip Enable High to Address Transition Min 0000 ns tEHDX tDH Chip Enable High to Data Transition Min 0000 ns tEHEL tCPH Chip Enable High to Chip Enable Low Min 252530 30 ns tEHGL Chip Enable High to Output Enable Low Min 252530 30 ns tEHWH tWH Chip Enable High to Write Enable High Min 0000 ns tELEH tCP Chip Enable Low to Chip Enable High Min 454550 50 ns tELQV Chip Enable Low to Output Valid Min 70 85 90 100 ns tQVVPL (1)(2) 1. Sampled only, not 100% tested. 2. Applicable if VPP is seen as a logic input (VPP < 3.6V). Output Valid to VPP Low Min 0000 ns tQVWPL Data Valid to Write Protect Low Min 0000 ns tVPHEH (1) tVPS VPP High to Chip Enable High Min 200 200 200 200 ns tWLEL tCS Write Enable Low to Chip Enable Low Min 0000 ns tWPHEH Write Protect High to Chip Enable High Min 454550 50 ns |
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