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SIM800C 数据表(PDF) 41 Page - SIMCom |
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SIM800C 数据表(HTML) 41 Page - SIMCom |
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41 / 52 page ![]() Smart Machine Smart Decision SIM800C_Hardware_Design_V1.02 41 2015-4-27 6. Electrical, Reliability and Radio Characteristics 6.1 Absolute Maximum Ratings The absolute maximum ratings stated in following table are stress ratings under non-operating conditions. Stresses beyond any of these limits will cause permanent damage to SIM800C. Table 27: Absolute maximum ratings Symbol Min Typ Max Unit VBAT - - 4.5 V Current 0 - 2.0 A USB_VBUS - - 12 V II* - 4 16 mA IO* - 4 16 mA *These parameters are for digital interface pins, GPIO, and UART. 6.2 Recommended Operating Conditions Table 28: Recommended operating conditions Symbol Parameter Min Typ Max Unit VBAT Power supply voltage 3.4 4.0 4.4 V TOPER Operating temperature -40 +25 +85 ℃ TSTG Storage temperature -45 +90 ℃ 6.3 Digital Interface Characteristics Table 29: Digital interface characteristics Symbol Parameter Min Typ Max Unit VIH High-level input current 2.1 - 3.1 V VIL Low-level input current -0.3 - 0.7 V VOH High-level output voltage 2.4 - - V VOL Low-level output voltage - - 0.4 V Note: These parameters are for digital interface pins, such as keypad, GPIO and UART. 6.4 SIM Card Interface Characteristics Table 30: SIM card interface characteristics Symbol Parameter Min Typ Max Unit IIH High-level input current -1.0 - 1.0 uA IIL Low-level input current -1.0 - 1.0 uA |
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