AT89C5131A-RDTIM datasheet(28/186 Pages) ATMEL

28 / 186 page

AT89C5130A/31A-M

4337G–USB–11/06

Program/Code

Memory

The AT89C5130A/31A-M implement 16/ 32 Kbytes of on-chip program/code memory.

Figure 13 shows the split of internal and external program/code memory spaces

depending on the product.

The Flash memory increases EPROM and ROM functionality by in-circuit electrical era-

sure and programming. Thanks to the internal charge pump, the high voltage needed for

programming or erasing Flash cells is generated on-chip using the standard VDD volt-

age. Thus, the Flash Memory can be programmed using only one voltage and allows In-

application Software Programming commonly known as IAP. Hardware programming

mode is also available using specific programming tool.

Figure 13.

Program/Code Memory Organization

Note:

If the program executes exclusively from on-chip code memory (not from external mem-

ory), beware of executing code from the upper byte of on-chip memory (3FFFh/7FFFh)

and thereby disrupting I/O Ports 0 and 2 due to external prefetch. Fetching code constant

from this location does not affect Ports 0 and 2.

External Code Memory

Access

Memory Interface

The external memory interface comprises the external bus (Port 0 and Port 2) as well as

the bus control signals (PSEN, and ALE).

Figure 14 shows the structure of the external address bus. P0 carries address A7:0

while P2 carries address A15:8. Data D7:0 is multiplexed with A7:0 on P0. Table 33

describes the external memory interface signals.

Figure 14.

External Code Memory Interface Structure

0000h

32 Kbytes

7FFFh

Flash

32 Kbytes

External Code

FFFFh

AT89C5131A

8000h

0000h

16 Kbytes

3FFFh

Flash

48 Kbytes

External Code

FFFFh

AT89C5130A

4000h

Flash

EPROM

AT89C5130A

AT89C5131

AD7:0

A15:8

A7:0

A15:8

D7:0

A7:0

ALE

Latch

PSEN

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