DocID7699 Rev 9

5/15

T4 series

Characteristics

Figure 7. Non-repetitive surge peak on-state

current for a sinusoidal pulse

with width t

p < 10 ms

Figure 8. Relative variation of gate trigger

current, holding current and latching current

versus junction temperature (typical values)

-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

j

I,I ,I [T ] /

GTHL

j

I

,I ,I [T =25°C]

GTHL

j

IGT

IH & IL

Figure 9. Relative variation of critical rate of

decrease of main current versus (dV/dt)c

(typical values)

Figure 10. Relative variation of critical rate of

decrease of main current versus junction

temperature

Figure 11. DPAK thermal resistance junction to ambient versus copper surface under tab (printed

circuit board FR4, copper thickness: 35 µm)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

T405

T435

T410

0

25

50

75

100

125

0

1

2

3

4

5

6

(dI/dt)c [T ] /

pecified]

j

(dI/dt)c [T s

j

T (°C)

j

0

4

8

1216202428323640

0

10

20

30

40

50

60

70

80

90

100

S(cm²)

R

(°C/W)

th(j-a)