Characteristics

T4 series

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DocID7699 Rev 9

1

Characteristics

Table 3. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

IT(rms)

On-state rms current

(full sine wave)

IPAK, DPAK,

TO-220AB

Tc = 110 °C

4

A

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25 °C)

F = 50 Hz

t = 20 ms

30

A

F = 60 Hz

t = 16.7 ms

31

I²tI²t value for fusing

tp = 10 ms

5.1

A²s

dI/dt

Critical rate of rise of on-state

current IG = 2 x IGT, tr ≤ 100 ns

F = 120 Hz

Tj = 125 °C

50

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to +150

- 40 to +125

°C

Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise stated)

Symbol

Test conditions

Quadrant

Value

Unit

T405 T410 T435

IGT

(1)

1.

Minimum IGT is guaranteed at 5% of IGT max.

VD = 12 V, RL = 30 Ω

I - II - III

Max.

5

10

35

mA

VGT

VD = 12 V, RL = 30 Ω

I - II - III

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 k Ω , Tj = 125 °C

I - II - III

Min.

0.2

V

IH

(2)

2.

For both polarities of A2 referenced to A1

IT = 100 mA

Max.

10

15

35

mA

IL

IG = 1.2 IGT

I - III

Max.

102550

mA

II

Max.

15

30

60

dV/dt (2)

VD = 67% VDRM, gate open

Tj = 125 °C

Min.

20

40

400

V/µs

(dI/dt)c (2)

(dV/dt)c = 0.1 V/µs

Tj = 125 °C

Min.

1.8

2.7

A/ms

(dV/dt)c = 10 V/µs

0.9

2.0

(without snubber)

2.5