T4_V01 datasheet(4/15 Pages) STMICROELECTRONICS

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Characteristics

T4 series

4/15

DocID7699 Rev 9

Figure 1. Maximum power dissipation versus

RMS on-state current (full cycle)

Figure 2. RMS on-state current versus case

temperature (full cycle)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

P(W)

(A)

T(RMS)

Figure 3. RMS on-state current versus ambient

temperature (printed circuit board FR4, copper

thickness: 35µm) (full cycle)

Figure 4. Relative variation of thermal

impedance versus pulse duration

Figure 5. On-state characteristics

(maximum values)

Figure 6. Surge peak on-state current versus

number of cycles

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.1

1.0

10.0

30.0

(A)

(V)

T max.

V = 0.90V

R = 120 m

T max.

T = 25°C

100

1000

(A)

TSM

Number of cycles

t=20ms

One cycle

Non repetitive

T initial=25°C

Repetitive

T =110°C

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