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T4 数据表(PDF) 3 Page - STMicroelectronics |
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T4 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() DocID7699 Rev 9 3/15 T4 series Characteristics Table 5. Static characteristics Symbol Test conditions Value Unit VTM (1) 1. For both polarities of A2 referenced to A1 ITM = 5.5 A, tp = 380 µs Tj = 25 °C Max. 1.56 V Vt0 (1) Threshold voltage Tj = 125 °C Max. 0.89 V Rd (1) Dynamic resistance Tj = 125 °C Max. 120 m IDRM IRRM VDRM = VRRM Tj = 25 °C Max. 5µA Tj = 125 °C 1 mA Table 6. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) IPAK, DPAK,TO-220AB 2.6 °C/W Rth(j-a) Junction to ambient S(1) = 0.5 cm² 1. S = Copper surface under tab. DPAK 70 °C/W Junction to ambient TO-220AB 60 °C/W IPAK 100 °C/W |
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