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UT6401L-AE3-R 数据表(PDF) 5 Page - VBsemi Electronics Co.,Ltd |
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UT6401L-AE3-R 数据表(HTML) 5 Page - VBsemi Electronics Co.,Ltd |
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5 / 10 page ![]() 5 Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Pulse width ≤ 1 µs Duty factor ≤ 0.1 % R D V GS R G D.U.T. - 10 V V DS V DD V GS 10 % 90 % V DS t d(on) t r t d(off) t f R G IAS 0.01 Ω tp D.U.T. L V DS + - V DD - 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp UT6401L-AE3-R www.VBsemi.com 服务热线:400-655-8788 |
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