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UT6401L-AE3-R 数据表(PDF) 7 Page - VBsemi Electronics Co.,Ltd

部件名 UT6401L-AE3-R
功能描述  P-Channel 60-V (D-S) MOSFET
PDF  10 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT6401L-AE3-R 数据表(HTML) 7 Page - VBsemi Electronics Co.,Ltd

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7
Fig. 14 - For P-Channel
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = - 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D =
P.W.
Period
+
-
-
+
* V
GS = - 5 V for logic level and - 3 V drive devices
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by R
G
• ISD controlled by duty factor "D"
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
RG
Compliment N-Channel of D.U.T. for driver
UT6401L-AE3-R
www.VBsemi.com
服务热线：400-655-8788



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