1

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kVRMS (t = 60 s;

f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• P-Channel

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead (Pb)-free Available

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = - 25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = - 5.3 A (see fig. 12).

c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V)

- 60

RDS(on) (Ω)VGS = - 10 V

0.

04

Qg (Max.) (nC)

12

Qgs (nC)

3.8

Qgd (nC)

5.1

Configuration

Single

S

G

D

P-Channel MOSFET

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at - 10 V

TC = 25 °C

ID

- 5.2

A

TC = 100 °C

- 3.8

Pulsed Drain Currenta

IDM

- 21

Linear Derating Factor

0.18

W/°C

Single Pulse Avalanche Energyb

EAS

120

mJ

Repetitive Avalanche Currenta

IAR

- 5.2

A

Repetitive Avalanche Energya

EAR

2.7

mJ

Maximum Power Dissipation

TC = 25 °C

PD

27

W

Peak Diode Recovery dV/dtc

dV/dt

- 4.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

UT6401L-AE3-R

www.VBsemi.com

P-Channel 60-V (D-S) MOSFET

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