2

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-65

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-5.5

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 60

-

-

V

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = - 1 mA

-

- 0.060

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.0

-

- 2.5

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V

-

-

- 100

µA

VDS = - 48 VGS = 0 V, TJ = 150 °C

-

-

- 500

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 3.2 Ab

-

-

0.

Ω

Forward Transconductance

gfs

VDS = - 25 V, ID = - 3.2 Ab

1.6

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = - 25 V,

f = 1.0 MHz, see fig. 5

-

270

-

pF

Output Capacitance

Coss

-

170

-

Reverse Transfer Capacitance

Crss

-31

-

Drain to Sink Capacitance

C

f = 1.0 MHz

-

12

-

Total Gate Charge

Qg

VGS = - 10 V

ID = - 4.7 A, VDS = - 48 V,

see fig. 6 and 13b

--

12

nC

Gate-Source Charge

Qgs

--

3.8

Gate-Drain Charge

Qgd

--

5.1

Turn-On Delay Time

td(on)

VDD = - 30 V, ID = - 4.7 A,

RG = 24 Ω, RD= 4.0 Ω,

see fig. 10b

-11

-

ns

Rise Time

tr

-63

-

Turn-Off Delay Time

td(off)

-9.6

-

Fall Time

tf

-31

-

Internal Drain Inductance

LD

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

LS

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

- 5.2

A

Pulsed Diode Forward Currenta

ISM

--

- 21

Body Diode Voltage

VSD

TJ = 25 °C, IS = - 5.2 A, VGS = 0 Vb

--

- 5 .5

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/µsb

-

80

160

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.096

0.19

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G

UT6401L-AE3-R

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