UT6401L-AG6-R datasheet(4/9 Pages) VBSEMI

部件名	UT6401L-AG6-R

功能描述	Dual P-Channel 60-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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4 / 9 page

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area

0.1

100

0.0

0.3

0.6

0.9

1.2

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

1.15

1.35

1.55

1.75

1.95

2.15

- 50

- 25

100

125

150

J - Temperature (°C)

D = 250 μA

0.05

0.10

0.15

0.20

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 3.5 A

Time (s)

100

600

10- 1

10- 2

10- 3

0.01

0.1

100

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

A = 25 °C

BVDSS Limited

10 ms

100 μs

10 s, 1 s

Limited by I

UT6401L-AG6-R

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