Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 110 °C/W.

d. Based on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω ) Typ.

ID (A) d

Qg (TYP.)

-60

0.070 at VGS = -10 V

-4.5

10.1 nC

0.085 at VGS = -4.5 V

-4.0

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

-4.5

A

TC = 70 °C

-4.0

TA = 25 °C

-3.5 a,b

TA = 70 °C

-3.0 a,b

Pulsed Drain Current (t = 100 μs)

IDM

-20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

-3.9

TA = 25 °C

-2.1a,b

Avalanche Current

L = 0.1 mH

IAS

-15

Single-Pulse Avalanche Energy

EAS

11.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

4.2

W

TC = 70 °C

2.7

TA = 25 °C

2 a,b

TA = 70 °C

1.3 a,b

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

Dual P-Channel 60-V (D-S) MOSFET

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

UT6401L-AG6-R

www.VBsemi.com

1

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

D2

G2

S1

S2

D1

G1

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient a

t

 5 s

RthJA

100

130

°C/W

Maximum junction-to-case (drain)

Steady state

RthJF

60

75

001

服务热线：400-655-8788