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UT6401L-AG6-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UT6401L-AG6-R
功能描述  Dual P-Channel 60-V (D-S) MOSFET
PDF  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT6401L-AG6-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UT6401L-AG6-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT6401L-AG6-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT6401L-AG6-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT6401L-AG6-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT6401L-AG6-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT6401L-AG6-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT6401L-AG6-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT6401L-AG6-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UT6401L-AG6-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
0
0.6
1.2
1.8
2.4
3
V
DS - Drain-to-Source Voltage (V)
V
GS = 4 V
V
GS = 10V thru 4.5V
V
GS = 3 V
0
0.05
0.1
0.15
0.2
0
5
10
15
20
I
D - Drain Current (A)
V
GS = 4.5 V
V
GS = 10 V
0
2
4
6
8
10
0
5
10
15
20
25
Q
g - Total Gate Charge (nC)
V
DS = 48 V
V
DS = 30 V
V
DS = 15 V
I
D = 3.5 A
0
0.5
1
1.5
2
0
1
2
3
4
V
GS - Gate-to-Source Voltage (V)
T
C = 25 °C
T
C = 125 °C
T
C = - 55 °C
0
315
630
945
1260
0
6
12
18
24
30
V
DS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.95
1.3
1.65
2
- 50
- 25
0
25
50
75
100
125
150
T
J - Junction Temperature (°C)
V
GS = 10 V, 3.5A
V
GS = 4.5 V, 2.8 A
3.5A
UT6401L-AG6-R
www.VBsemi.com
3
服务热线：400-655-8788



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