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AM29PL320DB70RWPI 数据表(PDF) 18 Page - Advanced Micro Devices |
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AM29PL320DB70RWPI 数据表(HTML) 18 Page - Advanced Micro Devices |
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18 / 49 page  16 Am29PL320D June 13, 2005 Table 10. System Interface String Addresses (Double Word Mode) Addresses (Word Mode) Data Description 1Bh 36h 0027h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 38h 0036h VCC Max. (write/erase), D7–D4: volt, D3–D0: 100 millivolt 1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP input present) 1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP input present) 1Fh 3Eh 0004h Typical timeout per single word/double word write 2N µs 20h 40h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 42h 000Ah Typical timeout per individual block erase 2N ms 22h 44h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 46h 0005h Max. timeout for word/ double word write 2N times typical 24h 48h 0000h Max. timeout for buffer write 2N times typical 25h 4Ah 0006h Max. timeout per individual block erase 2N times typical 26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Table 11. Device Geometry Definition Addresses (Double Word Mode) Addresses (Word Mode) Data Description 27h 4Eh 0016h Device Size = 2N byte 28h 29h 50h 52h 0005h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 54h 56h 0000h 0000h Max. number of bytes in multi-byte write = 2N (00h = not supported) 2Ch 58h 0004h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 0000h 0000h 0080h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 0001h 0000h 0040h 0000h Erase Block Region 2 Information 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0000h 0000h 0000h 0003h Erase Block Region 3 Information 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 000Eh 0000h 0000h 0004h Erase Block Region 4 Information |
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