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AM29PL320DB70RWPI 数据表(PDF) 21 Page - Advanced Micro Devices

部件名 AM29PL320DB70RWPI
功能描述  32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
PDF  49 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29PL320DB70RWPI 数据表(HTML) 21 Page - Advanced Micro Devices

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June 13, 2005
Am29PL320D
19
tected using the method described in “Sector Protec-
tion/Unprotection”.
If the system asserts VIH on the WP# input, the device
reverts to whether Sector 0 or 18 was last set to be
protected or unprotected. That is, sector protection or
unprotection for that sector depends on whether they
were last protected or unprotected using the method
described in “Sector Protection/Unprotection”.
Note that the WP# input must not be left floating or un-
connected; inconsistent behavior of the device may re-
sult.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 13 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up
and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored
until VCC is greater than VLKO. The system must pro-
vide the proper signals to the control inputs to prevent
unintentional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device
operations. Table 13 defines the valid register com-
mand sequences. Note that writing incorrect address
and data values or writing them in the improper se-
quence may place the device in an unknown state. A
reset command is required to return the device to nor-
mal operation.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read
timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more infor-
mation on this mode.
The system must issue the reset command to re-en-
able the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame-
ters, and Figure 13 shows the timing diagram.
Reset Command
Writing the reset command to the device resets the de-
vice to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence
before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.



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