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AM29PL320DB70RWPI 数据表(PDF) 27 Page - Advanced Micro Devices

部件名 AM29PL320DB70RWPI
功能描述  32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
PDF  49 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29PL320DB70RWPI 数据表(HTML) 27 Page - Advanced Micro Devices

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June 13, 2005
Am29PL320D
25
Command Definitions
Table 13.
Command Definitions (Double Word Mode)
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch
on the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits A19–A12 uniquely select any sector.
Notes:
1.
See Table 1 for description of bus operations.
2.
All values are in hexadecimal.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4.
Data bits DQ31–DQ8 are don’t cares for unlock and command
cycles.
5.
Address bits A19–A11 are don’t cares for unlock and command
cycles, unless SA or PA required.
6.
No unlock or command cycles required when reading array data.
7.
The Reset command is required to return to reading array data when
device is in the autoselect mode, or if DQ5 goes high (while the
device is providing status data).
8.
The fourth cycle of the autoselect command sequence is a read
cycle.
9.
DQ31–DQ16 output 2222h for device ID reads. The device ID must
be read across the fourth, fifth, and sixth cycles. The sixth cycle
specifies 22222200h for bottom boot devices and 22222201h for top
boot devices.
10. The data is 80h for factory locked and 00h for not factory locked.
11. The data is 00h for an unprotected sector and 01h for a protected
sector. See “Autoselect Command Sequence” for more information.
12. Command is valid when device is ready to read array data or when
device is in autoselect mode.
13. The Unlock Bypass command is required prior to the Unlock Bypass
Program command.
14. The Unlock Bypass Reset command is required to return to reading
array data when the device is in the unlock bypass mode.
15. The system may read and program in non-erasing sectors, or enter
the autoselect mode, when in the Erase Suspend mode. The Erase
Suspend command is valid only during a sector erase operation.
16. The Erase Resume command is valid only during the Erase Suspend
mode.
Command
Sequence
(Note 1)
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
00
01
Device ID (Note 9)
6
555
AA
2AA
55
555
90
01
227E
0E
2203
0F
2200 2201
SecSi
™ Sector Factory
Protect (Note 10)
4
555
AA
2AA
55
(BA)
555
90
(BA)
X03
(Note 10)
Sector Protect Verify
(Note 11)
4
555
AA
2AA
55
555
90
(SA)
X02
(Note 11)
Enter SecSi Sector Region
3
555
AA
2AA
55
555
88
Exit SecSi Sector Region
4
555
AA
2AA
55
555
90
XXX
00
CFI Query (Note 12)
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
(Note 13)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 14)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 15)
1
XXX
B0
Erase Resume (Note 16)
1
XXX
30
Temporary Sector Unprotect
Enable
4
555
AA
2AA
55
555
E0
XXX
01
Temporary Sector Unprotect
Disable
4
555
AA
2AA
55
555
E0
XXX
00



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