AM29PDL128G datasheet(3/71 Pages) AMD

3 / 71 page

This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may

be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 25685

Rev: B Amendment/+4

Issue Date: October 28, 2004

Am29PDL128G

128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous

Read/ Write Flash Memory with VersatileIOTM Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

128Mbit Page Mode device

— Word (16-bit) or double word (32-bit) mode selectable via

WORD# input

— Page size of 8 words/4 double words: Fast page read access

from random locations within the page

Single power supply operation

— Full Voltage range: 2.7 to 3.6 volt read, erase, and program

operations for battery-powered applications

Simultaneous Read/Write Operation

— Data can be continuously read from one bank while

executing erase/program functions in another bank

— Zero latency switching from write to read operations

FlexBank Architecture

— 4 separate banks, with up to two simultaneous operations

per device

— Organized as two 16 Mbit banks (Bank 1 & 4) and two 48

Mbit banks (Bank 2 & 3)

VersatileI/O

TM (V

IO) Control

— Output voltage generated and input voltages tolerated on the

device is determined by the voltage on the V

IO pin

SecSi (Secured Silicon) Sector region

— 128 words (64 double words) accessible through a

command sequence

Both top and bottom boot blocks in one device

Manufactured on 0.17 µm process technology

20-year data retention at 125°C

Minimum 1 million erase cycle guarantee per sector

PERFORMANCE CHARACTERISTICS

High Performance

— Page access times as fast as 25 ns

— Random access times as fast as 70 ns

Power consumption (typical values at 10 MHz)

— 38 mA active read current

— 17 mA program/erase current

— 1.5 µA typical standby mode current

SOFTWARE FEATURES

Software command-set compatible with JEDEC 42.4

standard

— Backward compatible with Am29F and Am29LV families

CFI (Common Flash Interface) complaint

— Provides device-specific information to the system, allowing

host software to easily reconfigure for different Flash devices

Erase Suspend / Erase Resume

— Suspends an erase operation to allow read or program

operations in other sectors of same bank

Unlock Bypass Program command

— Reduces overall programming time when issuing multiple

program command sequences

HARDWARE FEATURES

Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase

cycle completion

Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

WP# (Write Protect) input

—At V

IL, protects the two top and two bottom sectors,

regardless of sector protect/unprotect status

—At V

IH, allows removal of sector protection

— An internal pull up to Vcc is provided

Persistent Sector Protection

— A command sector protection method to lock combinations

of individual sectors and sector groups to prevent program or

erase operations within that sector

— Sectors can be locked and unlocked in-system at V

CC level

Password Sector Protection

— A sophisticated sector protection method to lock

combinations of individual sectors and sector groups to

prevent program or erase operations within that sector using

a user-defined 64-bit password

ACC (Acceleration) input provides faster programming

times in a factory setting

Package options

— 80-ball Fortified BGA

Refer to AMD’s Website (www.amd.com) for the latest information.

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