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AM29PDL128G 数据表(PDF) 6 Page - Advanced Micro Devices

部件名 AM29PDL128G
功能描述  128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
PDF  71 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29PDL128G 数据表(HTML) 6 Page - Advanced Micro Devices

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October 28, 2004
Am29PDL128G
5
P R E L IM IN A R Y
Figure 11. Input Waveforms and Measurement Levels .................. 52
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 53
Read-Only Operations ........................................................... 53
Figure 12. Read Operation Timings ................................................ 53
Figure 13. Page Read Operation Timings....................................... 54
Hardware Reset (RESET#) .................................................... 55
Figure 14. Reset Timings ................................................................ 55
Word/Double Word Configuration (WORD#) .......................... 56
Figure 15. WORD# Timings for Read Operations........................... 56
Figure 16. WORD# Timings for Write Operations........................... 56
Erase and Program Operations .............................................. 57
Figure 17. Program Operation Timings........................................... 58
Figure 18. Accelerated Program Timing Diagram........................... 58
Figure 19. Chip/Sector Erase Operation Timings ........................... 59
Figure 20. Back-to-back Read/Write Cycle Timings ....................... 60
Figure 21. Data# Polling Timings (During Embedded Algorithms).. 60
Figure 22. Toggle Bit Timings (During Embedded Algorithms)....... 61
Figure 23. DQ2 vs. DQ6.................................................................. 61
Temporary Sector Unprotect .................................................. 62
Figure 24. Temporary Sector Unprotect Timing Diagram .............. 62
Figure 25. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................. 63
Alternate CE# Controlled Erase and Program Operations ..... 64
Figure 26. Alternate CE# Controlled Write (Erase/Program)
Operation Timings.......................................................................... 65
Erase And Programming Performance. . . . . . . . 66
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 66
BGA Ball Capacitance . . . . . . . . . . . . . . . . . . . . . 66
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 67
LAB080—80-Ball Fortified Ball Grid Array
15 x 10 mm package .............................................................. 67
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 68



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