AM29PDL128G datasheet(33/71 Pages) AMD

部件名	AM29PDL128G

功能描述	128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control

PDF	71 Pages

Scroll/Zoom	100%

制造商	AMD [Advanced Micro Devices]

网页	http://www.amd.com

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33 / 71 page

Am29PDL128G

October 28, 2004

P R E L IM IN A R Y

Table 11.

System Interface String

Addresses

(Double Word

Mode)

Addresses

(Word Mode)

Data

Description

1Bh

36h

0027h

CC Min. (write/erase)

D7–D4: volt, D3–D0: 100 millivolt

1Ch

38h

0036h

CC Max. (write/erase)

D7–D4: volt, D3–D0: 100 millivolt

1Dh

3Ah

0000h

PP Min. voltage (00h = no VPP pin present)

1Eh

3Ch

0000h

PP Max. voltage (00h = no VPP pin present)

1Fh

3Eh

0004h

Typical timeout per single byte/word write 2

N µs

20h

40h

0000h

Typical timeout for Min. size buffer write 2

N µs (00h = not supported)

21h

42h

000Ah

Typical timeout per individual block erase 2

N ms

22h

44h

0000h

Typical timeout for full chip erase 2

N ms (00h = not supported)

23h

46h

0005h

Max. timeout for byte/word write 2

N times typical

24h

48h

0000h

Max. timeout for buffer write 2

N times typical

25h

4Ah

0004h

Max. timeout per individual block erase 2

N times typical

26h

4Ch

0000h

Max. timeout for full chip erase 2

N times typical (00h = not supported)

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