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BS640HD8V 数据表(PDF) 36 Page - Advanced Micro Devices

部件名 BS640HD8V
功能描述  128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  89 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

BS640HD8V 数据表(HTML) 36 Page - Advanced Micro Devices

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34
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A TA
SH EE T
Table 14.
Programmable Wait State Settings
Notes:
1. Upon power-up or hardware reset, the default setting is
seven wait states.
2. RDY will default to being active with data when the Wait
State Setting is set to a total initial access cycle of 2.
It is recommended that the wait state command
sequence be written, even if the default wait state value
is desired, to ensure the device is set as expected. A
hardware reset will set the wait state to the default set-
ting.
Reduced Wait-state Handshaking Option
If the device is equipped with the reduced wait-state
handshaking option, the host system should set
address bits A14–A12 to 010 for the system/device to
execute at maximum speed.
Table 15 describes the typical number of clock cycles
(wait states) for various conditions.
Table 15.
Wait States for Reduced Wait-state
Handshaking
Notes:
1. If the latched address is 3Eh or 3Fh (or an address offset
from either address by a multiple of 64), add two access
cycles to the values listed.
2. In the 8-, 16-, and 32-word burst modes, the address
pointer does not cross 64-word boundaries (3Fh, or
addresses offset from 3Fh by a multiple of 64).
3. Typical initial access cycles may vary depending on
system margin requirements.
A14
A13
A12
Total Initial Access
Cycles
000
2
001
3
010
4
011
5
100
6
1
0
1
7 (default)
110
Reserved
111
Reserved
System
Frequency
Range
Even Initial
Address
Odd Initial
Address
Device
Speed
Rating
6
–22 MHz
2
2
D
(54 MHz)
22
–28 MHz
2
3
28
–43 MHz
3
4
43
–54 MHz
4
5
6
–28 MHz
2
2
E
(66 MHz)
28
–35 MHz
2
3
35
–53 MHz
3
4
53
–66 MHz
4
5



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