LTM4650-2

4

Rev. 0

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ELECTRICAL CHARACTERISTICS

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTM4650-2 is tested under pulsed load conditions such that

TJ ≈ TA. The LTM4650-2E is guaranteed to meet specifications from

0°C to 125°C internal temperature. Specifications over the –40°C to

125°C internal operating junction temperature range are assured by

design, characterization and correlation with statistical process controls.

The LTM4650-2I is guaranteed over the full –40°C to 125°C internal

operating temperature range. Note that the maximum ambient temperature

consistent with these specifications is determined by specific operating

conditions in conjunction with board layout, the rated package thermal

impedance and other environmental factors.

Note 3: Two outputs are tested separately, and the same testing condition

is applied to each output.

Note 4: The LTM4650-2 device is designed to operate from 400kHz to

750kHz.

Note 5: These parameters are tested at wafer sort.

Note 6: See Thermal Considerations and Output Current Derating for

different VIN, VOUT and TA.

Note 7: These typical parameters are based on bench measurements.

Note 8: Guaranteed by design.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

IPGOOD

PGOOD Leakage Current

VPGOOD = 5V

±5

µA

VPGOOD

PGOOD Trip Level

VFB with Respect to Set Output Voltage

VFB Ramping Negative

VFB Ramping Positive

–10

10

%

%

INTVCC Linear Regulator

VINTVCC

Internal VCC Voltage

6V < VIN < 15V

4.8

5

5.2

V

VINTVCC

Load Regulation

INTVCC Load Regulation

ICC = 0mA to 50mA

0.75

2

%

VEXTVCC

EXTVCC Switchover Voltage

EXTVCC Ramping Positive

4.5

4.7

V

VEXTVCC(DROP)

EXTVCC Dropout

ICC = 20mA, VEXTVCC = 5V

50

100

mV

VEXTVCC(HYST)

EXTVCC Hysteresis

220

mV

Oscillator and Phase-Locked Loop

Frequency Nominal

Nominal Frequency

fSET = 1.2V

450

500

550

kHz

Frequency Low

Lowest Frequency

fSET = 0.93V

400

kHz

Frequency High

Highest Frequency

fSET > 2.4V, Up to INTVCC

750

kHz

fSET

Frequency Set Current

9

10

11

µA

RMODE_PLLIN

MODE_PLLIN Input Resistance

250

kΩ

CLKOUT

Phase (Relative to VOUT1)

PHASMD = GND

PHASMD = Float

PHASMD = INTVCC

60

90

120

Deg

Deg

Deg

CLK High

CLK Low

Clock High Output Voltage

Clock Low Output Voltage

2

0.4

V

V

Differential Amplifier

AV Differential

Amplifier

Gain

1

V/V

RIN

Input Resistance

Measured at DIFFP Input

80

kΩ

VOS

Input Offset Voltage

VDIFFP = VDIFFOUT = 1.5V, IDIFFOUT = 100µA

3

mV

PSRR Differential

Amplifier

Power Supply Rejection Ratio

5V < VIN < 15V

90

dB

ICL

Maximum Output Current

2

mA

VOUT(MAX)

Maximum Output Voltage

IDIFFOUT = 300µA

INTVCC – 1.4

V

GBW (Note 8)

Gain Bandwidth Product

3

MHz

VTEMP

Diode Connected PNP

I = 100µA

0.6

V

TC

Temperature Coefficient

l

–2.2

mV/°C

The l denotes the specifications which apply over the specified internal

operating junction temperature range. Specified as each individual output channel. TA = 25°C (Note 2), VIN = 12V and VRUN1, VRUN2 at

5V unless otherwise noted. Per the typical application in Figure 24.