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TSC200 数据表(PDF) 21 Page - STMicroelectronics |
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TSC200 数据表(HTML) 21 Page - STMicroelectronics |
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21 / 34 page ![]() Figure 40. Recommended layout 5.10 EMI rejection ratio (EMIRR) The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of the current sensing device. An adverse effect that is common to many current sensing devices is a change in the offset voltage as a result of RF signal rectification. A first order, an internal low pass filter, is included on the input of the TSC20x to minimize susceptibility to EMIRR. Figure 41 shows the EMIRR on pin IN+, Figure 42 shows the EMIRR on pin IN- of the TSC200 measured from 10 MHz up to 2.4 GHz. Figure 41. EMIRR on pin+ 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 20 40 60 80 100 120 Vcc=5V Vicm=12V T=25°C Prf=-10dBm Frequency (MHz) Figure 42. EMIRR on pin- 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 20 40 60 80 100 120 Vcc=5V Vicm=12V T=25°C Prf=-10dBm Frequency (MHz) 5.11 Overload recovery Overload recovery is defined as the time required for the current sensing output to recover from a saturated state to a linear state. The saturated state occurs when the output voltage gets very close to either rail in the application. It normally results from an excessive input voltage. TSC200, TSC201, TSC202 EMI rejection ratio (EMIRR) DS13882 - Rev 2 page 21/34 |
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