APTM50AM24SCG

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3 – 7

SiC Parallel diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

600

V

400

1600

Maximum Reverse Leakage Current

800

8000

µA

DC Forward Current

Tc = 125°C

80

A

1.6

1.8

Diode Forward Voltage

2.0

2.4

V

Total Capacitive Charge

di/dt =2000A/µs

112

nC

520

Q

Total Capacitance

400

pF

Thermal and package characteristics

Symbol Characteristic

Min

Typ

Max

Unit

Transistor

0.10

Series diode

0.46

Junction to Case Thermal Resistance

Parallel diode

0.35

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

Operating junction temperature range

-40

150

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

To heatsink

M6

3

5

Torque

Mounting torque

For terminals

M5

2

3.5

N.m

Wt

Package Weight

280

g

See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com