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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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APTM50AM24SCG 数据表(PDF) 2 Page - Microsemi Corporation |
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APTM50AM24SCG 数据表(HTML) 2 Page - Microsemi Corporation |
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2 / 7 page  APTM50AM24SCG www.microsemi.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 500V Tj = 25°C 500 µA IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V Tj = 125°C 3 mA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 75A 24 28 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 19.6 Coss Output Capacitance 4.2 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.3 nF Qg Total gate Charge 434 Qgs Gate – Source Charge 120 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 150A 216 nC Td(on) Turn-on Delay Time 10 Tr Rise Time 17 Td(off) Turn-off Delay Time 50 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 150A RG = 0.8Ω 41 ns Eon Turn-on Switching Energy 1.15 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 150A, RG = 0.8Ω 1.5 mJ Eon Turn-on Switching Energy 1.97 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 150A, RG = 0.8Ω 1.7 mJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Repetitive Reverse Voltage 200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 600 µA IF DC Forward Current Tc = 85°C 120 A IF = 120A 1.1 1.15 IF = 240A 1.4 VF Diode Forward Voltage IF = 120A Tj = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time Tj = 125°C 60 ns Tj = 25°C 120 Qrr Reverse Recovery Charge IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 500 nC |
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