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APTM50AM24SCG 数据表(PDF) 6 Page - Microsemi Corporation

部件名 APTM50AM24SCG
功能描述  Phase leg Series & SiC parallel diodes MOSFET Power Module
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM50AM24SCG 数据表(HTML) 6 Page - Microsemi Corporation

  APTM50AM24SCG Datasheet HTML 1Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 2Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 3Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 4Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 5Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 6Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 7Page - Microsemi Corporation  
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APTM50AM24SCG
www.microsemi.com
6 – 7
Delay Times vs Current
td(on)
td(off)
0
10
20
30
40
50
60
30
80
130
180
230
280
ID, Drain Current (A)
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
30
80
130
180
230
280
ID, Drain Current (A)
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
100
200
300
400
500
600
30
60
90
120
150
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=0.8Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
10000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
30
80
130
180
230
280
ID, Drain Current (A)
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
Eon
Eoff
0
2
4
6
8
01234
56789
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=333V
ID=150A
TJ=125°C
L=100µH



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