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APTM50AM24SCG 数据表(PDF) 1 Page - Microsemi Corporation

部件名 APTM50AM24SCG
功能描述  Phase leg Series & SiC parallel diodes MOSFET Power Module
PDF  7 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM50AM24SCG 数据表(HTML) 1 Page - Microsemi Corporation

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APTM50AM24SCG
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OUT
S1
G2
S2
G1
Q2
0/VBUS
VBUS
Q1
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
150
ID
Continuous Drain Current
Tc = 80°C
110
IDM
Pulsed Drain current
600
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
28
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 500V
RDSon = 24mΩ typ @ Tj = 25°C
ID = 150A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Phase leg
Series & SiC parallel diodes
MOSFET Power Module


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