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M28W320FCT 数据表(PDF) 52 Page - STMicroelectronics

部件名 M28W320FCT
功能描述  32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
PDF  69 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M28W320FCT 数据表(HTML) 52 Page - STMicroelectronics

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Common Flash Interface (CFI)
M28W320FCT, M28W320FCB
52/69
17h
0000h
Alternate Vendor Command Set and Control Interface ID Code second
vendor - specified algorithm supported (0000h means none exists)
NA
18h
0000h
19h
0000h
Address for Alternate Algorithm extended Query table
(0000h means none exists)
NA
1Ah
0000h
1.
Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 27.
CFI Query Identification String(1) (continued)
Offset
Data
Description
Value
Table 28.
CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0027h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
0036h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2n µs
16µs
20h
0004h
Typical time-out for Double/ Quadruple Word Program = 2n µs
16µs
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
23h
0005h
Maximum time-out for word program = 2n times typical
512µs
24h
0005h
Maximum time-out for Double/ Quadruple Word Program = 2n times typical
512µs
25h
0003h
Maximum time-out per individual block erase = 2n times typical
8s
26h
0000h
Maximum time-out for chip erase = 2n times typical
NA



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