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MCP1702 数据表(PDF) 13 Page - Microchip Technology

部件名 MCP1702
功能描述  250 mA Low Quiescent Current LDO Regulator
PDF  26 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MCP1702 数据表(HTML) 13 Page - Microchip Technology

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© 2007 Microchip Technology Inc.
DS22008B-page 13
MCP1702
6.0
APPLICATION CIRCUITS AND
ISSUES
6.1
Typical Application
The MCP1702 is most commonly used as a voltage
regulator. It’s low quiescent current and low dropout
voltage makes it ideal for many battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1702 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The
maximum
continuous
operating
junction
temperature specified for the MCP1702 is +125°C. To
estimate the internal junction temperature of the
MCP1702, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
θJA). The thermal resistance from junction to
ambient for the SOT-23A pin package is estimated at
336°C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type = SOT-23A
Input Voltage Range = 2.8V to 3.2V
VIN maximum = 3.2V
VOUT typical = 1.8V
IOUT = 150 mA maximum
MCP1702
GND
VOUT
VIN
CIN
1µF Ceramic
COUT
1µF Ceramic
VOUT
VIN
(2.8V to 3.2V)
1.8V
IOUT
150 mA
PLDO
VIN MAX)
()
VOUT MIN
()
() I
OUT MAX
)
()
×
=
Where:
PLDO = LDO Pass device internal
power dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
TJMAX
()
PTOTAL JA
×
TAMAX
+
=
Where:
TJ(MAX) = Maximum continuous junction
temperature
PTOTAL = Total device power dissipation
R
θJA
Thermal resistance from
junction to ambient
TAMAX = Maximum ambient temperature
PDMAX
()
TJMAX
()
TAMAX
()
()
R
θ
JA
---------------------------------------------------
=
Where:
PD(MAX) = Maximum device power
dissipation
TJ(MAX) = Maximum continuous junction
temperature
TA(MAX)
Maximum ambient temperature
R
θJA = Thermal resistance from
junction to ambient
TJRISE
()
PDMAX
()
R
θ
JA
×
=
Where:
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature
PTOTAL = Maximum device power
dissipation
R
θJA
Thermal resistance from
junction to ambient
TJ
TJRISE
()
TA
+
=
Where:
TJ = Junction Temperature
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature
TA
Ambient temperature



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