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MCP1702 数据表(PDF) 13 Page - Microchip Technology |
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MCP1702 数据表(HTML) 13 Page - Microchip Technology |
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13 / 26 page ![]() © 2007 Microchip Technology Inc. DS22008B-page 13 MCP1702 6.0 APPLICATION CIRCUITS AND ISSUES 6.1 Typical Application The MCP1702 is most commonly used as a voltage regulator. It’s low quiescent current and low dropout voltage makes it ideal for many battery-powered applications. FIGURE 6-1: Typical Application Circuit. 6.1.1 APPLICATION INPUT CONDITIONS 6.2 Power Calculations 6.2.1 POWER DISSIPATION The internal power dissipation of the MCP1702 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (2.0 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: The maximum continuous operating junction temperature specified for the MCP1702 is +125°C. To estimate the internal junction temperature of the MCP1702, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (R θJA). The thermal resistance from junction to ambient for the SOT-23A pin package is estimated at 336°C/W. EQUATION 6-2: The maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 6-3: EQUATION 6-4: EQUATION 6-5: Package Type = SOT-23A Input Voltage Range = 2.8V to 3.2V VIN maximum = 3.2V VOUT typical = 1.8V IOUT = 150 mA maximum MCP1702 GND VOUT VIN CIN 1µF Ceramic COUT 1µF Ceramic VOUT VIN (2.8V to 3.2V) 1.8V IOUT 150 mA PLDO VIN MAX) () VOUT MIN () – () I OUT MAX ) () × = Where: PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage TJMAX () PTOTAL RθJA × TAMAX + = Where: TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation R θJA Thermal resistance from junction to ambient TAMAX = Maximum ambient temperature PDMAX () TJMAX () TAMAX () – () R θ JA --------------------------------------------------- = Where: PD(MAX) = Maximum device power dissipation TJ(MAX) = Maximum continuous junction temperature TA(MAX) Maximum ambient temperature R θJA = Thermal resistance from junction to ambient TJRISE () PDMAX () R θ JA × = Where: TJ(RISE) = Rise in device junction temperature over the ambient temperature PTOTAL = Maximum device power dissipation R θJA Thermal resistance from junction to ambient TJ TJRISE () TA + = Where: TJ = Junction Temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA Ambient temperature |
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