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AS7C1028 数据表(PDF) 3 Page - Alliance Semiconductor Corporation

部件名 AS7C1028
功能描述  5V 256K X 4 CMOS SRAM (Common I/O)
PDF  8 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS7C1028 数据表(HTML) 3 Page - Alliance Semiconductor Corporation

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AS7C1028
12/5/06; V.1.0
Alliance Memory
P. 3 of 8
®
Recommended operating conditions
Note:
1
VIL min = –1.5V for pulse width less than 10ns, once per cycle.
DC operating characteristics (over the operating range)1
Capacitance (f = 1MHz, Ta = room temperature, VCC = NOMINAL)
2
Note:
This parameter is guaranteed by device characterization, but is not production tested.
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
Input voltage
VIH
2.2
–
VCC+0.5
V
VIL
(1)
-0.5(1)
–0.8
V
Ambient operating temperature (Industrial)
TA
–40
–
85
oC
Parameter
Symbol
Test conditions
AS7C1028-12
Unit
Min
Max
Input leakage current
|I
LI|
VCC = Max,
Vin = GND to VCC
–
5
µA
Output leakage current
|I
LO|
VCC = Max, CS = VIH,
VOUT = GND to VCC
–
5
µA
Operating power supply current
ICC
VCC = Max, CE ≤ VIL
f = fMax, IOUT = 0mA
–
170
mA
Standby power supply current
ISB
VCC = Max, CE > VIH
f = fMax, IOUT = 0mA
–
40
mA
ISB1
VCC = Max, CE > VCC–0.2V
VIN < GND + 0.2V or
VIN > VCC–0.2V, f = 0
–
10
mA
Output voltage
VOL
IOL = 8 mA, VCC = Min
–
0.4
V
VOH
IOH = –4 mA, VCC = Min
2.4
–
V
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE, WE, OE
Vin = 3dV
8
pF
I/O capacitance
CI/O
I/O
Vout = 3dV
8
pF



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