AS7C3513C

9/5/06, v 1.0

Alliance Memory

P. 2 of 9

®

Functional description

The AS7C3513C is a 3V high-performance CMOS 524,288-bit Static Random Access Memory (SRAM) device organized as

32,768 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are

desired.

performance applications.

When CE is high, the device enters standby mode. A write cycle is accomplished by asserting write enable (WE) and chip

enable (CE). Data on the input pins I/O0 through I/O15 is written on the rising edge of WE (write cycle 1) or CE (write cycle

2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable

(OE) or write enable (WE).

A read cycle is accomplished by asserting output enable (OE) and chip enable (CE) with write enable (WE) high. The chips

drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write

enable is active, output drivers stay in high-impedance mode.

The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be

written and read. LB controls the lower bits, I/O0 through I/O7, and UB controls the higher bits, I/O8 through I/O15.

All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3 V supply. AS7C3513C is packaged in

Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-

tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods may affect reliability.

Absolute maximum ratings

Parameter

Symbol

Min

Max

Unit

–0.50

+4.60

V

Voltage on any pin relative to GND

–0.50

V

Power dissipation

–1.25

W

Storage temperature (plastic)

–55

+125

°C

Ambient temperature with VCC applied

–55

+125

°C

DC current into outputs (low)

–50

mA

Truth table

CE

WE

OE

LB

UB

I/O0–I/O7

I/O8–I/O15

Mode

HXXXX

High Z

High Z

LH

L

L

H

High Z

LH

LH

L

High Z

L

H

LLL

LL

X

L

L

LL

X

L

H

High Z

LL

X

H

L

High Z

L

L

H

X

H

X

X

H

X

H

High Z

High Z