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AS7C3513C 数据表(PDF) 3 Page - Alliance Semiconductor Corporation |
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AS7C3513C 数据表(HTML) 3 Page - Alliance Semiconductor Corporation |
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3 / 9 page ![]() AS7C3513C 9/5/06, v 1.0 Alliance Memory P. 3 of 9 ® VIL = -2.0V for pulse width less than 5ns, once per cycle. VIH = VCC +2.0V for pulse width less than 5ns, once per cycle. Recommended operating conditions Parameter Symbol Min Nominal Max Unit Supply voltage VCC 3.0 3.3 3.6 V Input voltage VIH 2.0 – VCC + 0.5 V VIL –0.5 – 0.8 V Ambient operating temperature (industrial) TA –40 – 85 o C DC operating characteristics (over the operating range)1 Parameter Sym Test conditions AS7C3513C-10 Unit Min Max Input leakage current | I LI | VCC = Max VIN = GND to VCC –5 µA Output leakage current | I LO | VCC = Max CE = VIH, VOUT = GND to VCC –5 µA Operating power supply current ICC VCC = Max, CE ≤ V IL, IOUT = 0mA f = fMax – 160 mA Standby power supply current ISB VCC = Max, CE ≥ V IH, f = fMax –45 mA ISB1 VCC = Max, CE ≥ VCC–0.2 V, VIN ≤ 0.2 V or VIN ≥ VCC–0.2 V, f = 0 –10 mA Output voltage VOL IOL = 8 mA, VCC = Min – 0.4 V VOH IOH = –4 mA, VCC = Min 2.4 – V Capacitance (f = 1MHz, Ta = 25 °C, VCC = NOMINAL) 2 Parameter Symbol Signals Test conditions Max Unit Input capacitance CIN A, CE, WE, OE, LB, UB VIN = 3dV 6 pF I/O capacitance CI/O I/O VOUT = 3dV 7 pF Note: 1. This parameter is guaranteed by device characterization, but is not production tested. |
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