AS7C3513C

9/5/06, v 1.0

Alliance Memory

P. 6 of 9

®

AC test conditions

Notes

1

2

This parameter is sampled, but not 100% tested.

3

For test conditions, see AC Test Conditions, Figures A and B.

4

5

This parameter is guaranteed, but not tested.

6WE is high for read cycle.

7CE and OE are low for read cycle.

8

Address is valid prior to or coincident with CE transition low.

9

All read cycle timings are referenced from the last valid address to the first transitioning address.

10 N/A

11

All write cycle timings are referenced from the last valid address to the first transitioning address.

12 Not applicable.

13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.

Address

CE

LB, UB

WE

Data undefined

high Z

high Z

Data valid

255

Ω

320

Ω

GND

+3.3 V

Figure B: 3.3 V Output load

168

Ω

Thevenin Equivalent:

+1.728 V

10%

90%

10%

90%

GND

+3.0 V

Figure A: Input pulse

3 ns

– Output load: see Figure B.

– Input pulse level: GND to 3.0 V. See Figure A.

– Input rise and fall times: 3 ns. See Figure A.

– Input and output timing reference levels: 1.5