数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

PM6680 数据表(PDF) 35 Page - STMicroelectronics

部件名 PM6680
功能描述  No Rsense dual step-down controller with adjustable voltages for notebook system power
PDF  49 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

PM6680 数据表(HTML) 35 Page - STMicroelectronics

Back Button PM6680 Datasheet HTML 31Page - STMicroelectronics PM6680 Datasheet HTML 32Page - STMicroelectronics PM6680 Datasheet HTML 33Page - STMicroelectronics PM6680 Datasheet HTML 34Page - STMicroelectronics PM6680 Datasheet HTML 35Page - STMicroelectronics PM6680 Datasheet HTML 36Page - STMicroelectronics PM6680 Datasheet HTML 37Page - STMicroelectronics PM6680 Datasheet HTML 38Page - STMicroelectronics PM6680 Datasheet HTML 39Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 35 / 49 page
background image
PM6680
Device description
35/49
7.13.5
Power MOSFETs
Logic-level MOSFETs are recommended, since low side and high side gate drivers are
powered by LDO5. Their breakdown voltage VBRDSS must be higher than VINmax.
In notebook applications, power management efficiency is a high level requirement. The
power dissipation on the power switches becomes an important factor in switching
selections. Losses of high-side and low-side MOSFETs depend on their working conditions.
The power dissipation of the high-side MOSFET is given by:
Equation 18
Maximum conduction losses are approximately:
Equation 19
where RDSon is the drain-source on resistance of the high side MOSFET. Switching losses
are approximately:
Equation 20
where ton and toff are the switching times of the turn off and turn off phases of the MOSFET.
As general rule, high side MOSFETs with low gate charge are recommended, in order to
minimize driver losses. Below there is a list of possible choices for the high side MOSFET.
The power dissipation of the low side MOSFET is given by:
Equation 21
Maximum conduction losses occur at the maximum input voltage:
Table 13.
High side MOSFET manufacturer
Manufacturer
Type
Gate charge (nC)
Rated reverse voltage (V)
ST
STS12NH3LL
10
30
ST
STS17NH3LL
18
30
switching
conduction
DHighSide
P
P
P
+
=
2
LOAD
min
IN
OUT
DSon
conduction
(max)
I
V
V
R
P
×
×
=
2
f
t
)
2
I
(max)
I
(
V
2
f
t
)
2
I
(max)
I
(
V
P
sw
off
L
LOAD
IN
sw
on
L
LOAD
IN
switching
×
×
∆
+
×
+
×
×
∆
−
×
=
conduction
DLowSide
P
P
=



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com