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GD600HTX65P4S 数据表(PDF) 2 Page - StarPower Europe AG |
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GD600HTX65P4S 数据表(HTML) 2 Page - StarPower Europe AG |
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2 / 10 page ![]() GD600HTX65P4S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 3/27/2018 2/10 Preliminary Absolute Maximum Ratings T F=25 oC unless otherwise noted IGBT Symbol Description Values Unit VCES Collector-Emitter Voltage 650 V VGES Gate-Emitter Voltage ±20 V ICN Implemented Collector Current 600 A IC Collector Current @ TF=25 oC @ TF=80 oC 570 400 A ICM Pulsed Collector Current tp=1ms 1200 A PD Maximum Power Dissipation @ Tj=175 oC 1250 W Diode Symbol Description Values Unit VRRM Repetitive Peak Reverse Voltage 650 V IFN Implemented Collector Current 600 A IF Diode Continuous Forward Current 400 A IFM Diode Maximum Forward Current tp=1ms 1200 A Module Symbol Description Values Unit Tjmax Maximum Junction Temperature 175 oC Tjop Operating Junction Temperature -40 to +150 oC TSTG Storage Temperature Range -40 to +125 oC VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V |
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