GD600HTX65P4S datasheet(4/10 Pages) STARPOWER

4 / 10 page

GD600HTX65P4S

IGBT Module

3/27/2018

4/10

Preliminary

Diode Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Diode Forward

Voltage

IC=400A,VGE=0V,Tj=25

1.40

1.75

IC=400A,VGE=0V,Tj=125

1.35

IC=400A,VGE=0V,Tj=150

1.30

Recovered Charge

VR=300V,IF=400A,

-di/dt=5060

A/μs,V

GE=-15V

Tj=25

15.5

μC

IRM

Peak Reverse

Recovery Current

206

Erec

Reverse Recovery

Energy

3.74

Recovered Charge

VR=300V,IF=400A,

-di/dt=5060A/

μs,V

GE=-15V

Tj=125

34.3

μC

IRM

Peak Reverse

Recovery Current

321

Erec

Reverse Recovery

Energy

7.81

Recovered Charge

VR=300V,IF=400A,

-di/dt=5060

A/μs,V

GE=-15V

Tj=150

39.3

μC

IRM

Peak Reverse

Recovery Current

357

Erec

Reverse Recovery

Energy

9.35

NTC Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100

oC,R

100=493.3

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

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