GD600HTX65P4S

IGBT Module

©2018 STARPOWER Semiconductor Ltd.

3/27/2018

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Preliminary

STARPOWER

SEMICONDUCTOR

IGBT

GD600HTX65P4S

650V/600A 6 in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

hybrid and electric vehicles.

Features



Low VCE(sat) Trench IGBT technology



Low switching losses



VCE(sat) with positive temperature coefficient



Maximum junction temperature 175

oC



Low inductance case



Fast & soft reverse recovery anti-parallel FWD



Isolated copper pinfin baseplate using DBC technology

Typical Applications



Hybrid and electric vehicles



Inverter for motor drive



Uninterruptible power supply

Equivalent Circuit Schematic