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GD600HTX65P4S 数据表(PDF) 3 Page - StarPower Europe AG |
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GD600HTX65P4S 数据表(HTML) 3 Page - StarPower Europe AG |
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3 / 10 page ![]() GD600HTX65P4S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 3/27/2018 3/10 Preliminary IGBT Characteristics T F=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=400A,VGE=15V, Tj=25 oC 1.30 1.60 V IC=400A,VGE=15V, Tj=125 oC 1.35 IC=400A,VGE=15V, Tj=150 oC 1.40 VGE(th) Gate-Emitter Threshold Voltage IC=9.60mA,VCE=VGE, Tj=25 oC 5.1 5.8 6.5 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance 0.67 Ω Cies Input Capacitance VCE=25V,f=1MHz, VGE=0V 69.5 nF Cres Reverse Transfer Capacitance 1.37 nF QG Gate Charge VGE=-15﹍+15V 4.16 μC td(on) Turn-On Delay Time VCC=300V,IC=400A, RGon =2.2Ω,R Goff =1.0Ω, VGE=±15V,Tj=25 oC 72 ns tr Rise Time 64 ns td(off) Turn-Off Delay Time 350 ns tf Fall Time 23 ns Eon Turn-On Switching Loss 7.10 mJ Eoff Turn-Off Switching Loss 11.2 mJ td(on) Turn-On Delay Time VCC=300V,IC=400A, RGon =2.2Ω,R Goff =1.0Ω, VGE=±15V,Tj=125 oC 80 ns tr Rise Time 72 ns td(off) Turn-Off Delay Time 380 ns tf Fall Time 40 ns Eon Turn-On Switching Loss 8.60 mJ Eoff Turn-Off Switching Loss 14.1 mJ td(on) Turn-On Delay Time VCC=300V,IC=400A, RGon =2.2Ω,R Goff =1.0Ω, VGE=±15V,Tj=150 oC 81 ns tr Rise Time 73 ns td(off) Turn-Off Delay Time 385 ns tf Fall Time 48 ns Eon Turn-On Switching Loss 9.20 mJ Eoff Turn-Off Switching Loss 14.8 mJ ISC SC Data tP ≤6μs,V GE=15V, Tj=150 oC,V CC=360V, VCEM ≤650V 3000 A |
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