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M58BW016DB 数据表(PDF) 9 Page - STMicroelectronics |
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M58BW016DB 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 69 page  M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Description 9/69 Table 1. Signal names Signal Description Direction A0-A18 Address inputs Inputs DQ0-DQ7 Data input/output, command input I/O DQ8-DQ15 Data input/output, Burst Configuration Register I/O DQ16-DQ31 Data input/output I/O B Burst Address Advance Input E Chip Enable Input G Output Enable Input K Burst Clock Input L Latch Enable Input R Valid Data Ready (open drain output) Output RP Reset/Power-down Input W Write Enable Input GD Output Disable Input WP Write Protect Input VDD Supply voltage VDDQ Power supply for output buffers VDDQIN Power supply for input buffers only VPP Optional supply voltage for fast program and fast erase operations VSS Ground VSSQ Input/output ground NC Not connected internally DU Don’t use as internally connected |
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