ST10F271B datasheet(33/180 Pages) STMICROELECTRONICS

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ST10F271B/ST10F271E

Internal Flash memory

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5.4.4

Flash control register 1 high

The Flash Control Register 1 High (FCR1H), together with Flash Control Register 1 Low

(FCR1L), is used to select the Sectors to Erase, or during any write operation to monitor the

status of each Sector and Bank.

During any erase operation, this bit is automatically set and gives the status of the Bank 0.

The meaning of B0Fy bit for Sector y of Bank 0 is given by the next Table 4 Banks (BxS) and

Sectors (BxFy) Status bits meaning. These bits are automatically reset at the end of an

erase operation if no errors are detected.

5.4.5

Flash data register 0 low

The Flash Address Registers (FARH/L) and the Flash Data Registers (FDR1H/L-FDR0H/L)

are used during the program operations to store Flash Address in which to program and

Data to program.

FCR1H (0x08 0006)

FCR

Reset value:

0000h

765

210

reserved

B0S

reserved

Table 10.

Flash control register 1 high

Bit

Function

B0S

Bank 0 Status (IFLASH)

During any erase operation, this bit is automatically modified and gives the status

of the Bank 0. The meaning of B0S bit is given in the next Table 4 Banks (BxS) and

Sectors (BxFy) Status bits meaning. This bit is automatically reset at the end of a

erase operation if no errors are detected.

Table 11.

Banks (BxS) and sectors (BxFy) status bits meaning

ERR

SUSP

B0S = 1 meaning

B0Fy = 1 meaning

Erase Error in Bank 0

Erase Error in Sector y of Bank 0

Erase Suspended in Bank 0

Erase Suspended in Sector y of Bank 0

Don’t care

FDR0L (0x08 0008)

FCR

Reset value:

FFFFh

765

210

DIN15 DIN14 DIN13 DIN12 DIN11 DIN10 DIN9 DIN8 DIN7 DIN6 DIN5 DIN4 DIN3 DIN2 DIN1 DIN0

Table 12.

Flash data register 0 low

Bit

Function

DIN(15:0)

Data Input 15:0

These bits must be written with the Data to program the Flash with the following

operations: Word Program (32-bit), Double Word Program (64-bit) and Set

Protection.

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