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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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ST10F271B 数据表(PDF) 35 Page - STMicroelectronics |
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ST10F271B 数据表(HTML) 35 Page - STMicroelectronics |
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35 / 180 page  ST10F271B/ST10F271E Internal Flash memory 35/180 5.4.9 Flash address register low 5.4.10 Flash address register high FARL (0x08 0010) FCR Reset value: 0000h 15 14 13 12 11 10 98 765 43 210 ADD15ADD14ADD13ADD12ADD11ADD10 ADD9 ADD8 ADD7 ADD6 ADD5 ADD4 ADD3 ADD2 reserved RW RW RW RW RW RW RW RW RW RW RW RW RW RW Table 16. Flash address register low Bit Function ADD(15:2) Address 15:2 These bits must be written with the Address of the Flash location to program in the following operations: Word Program (32-bit) and Double Word Program (64-bit). In Double Word Program bit ADD2 must be written to ‘0’. FARH (0x08 0012) FCR Reset value: 0000h 15 14 13 12 11 10 98 765 43 210 reserved ADD20 ADD19 ADD18 ADD17 ADD16 RW RW RW RW RW Table 17. Flash address register high Bit Function ADD(20:16) Address 20:16 These bits must be written with the Address of the Flash location to program in the following operations: Word Program and Double Word Program. |
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