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ADBMS1818ASWZ-R7 数据表(PDF) 71 Page - Analog Devices |
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ADBMS1818ASWZ-R7 数据表(HTML) 71 Page - Analog Devices |
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71 / 92 page ![]() Data Sheet ADBMS1818 APPLICATIONS INFORMATION analog.com Rev. B | 71 of 92 PROVIDING DC POWER Simple Linear Regulator The primary supply pin for the ADBMS1818 is the 5 V (±0.5 V) VREG input pin. To generate the required 5 V supply for VREG, the DRIVE pin can be used to form a discrete regulator with the addition of a few external components, as shown in Figure 93. The DRIVE pin provides a 5.7 V output, capable of sourcing 1 mA. When buffered with an NPN transistor, the DRIVE pin provides a stable 5 V over temperature. The NPN transistor must be chosen to have a sufficient Beta over temperature (> 40) to supply the necessary supply current. The peak VREG current requirement of the ADBMS1818 approaches 35 mA when simultaneously commu- nicating over isoSPI and making ADC conversions. If the VREG pin is required to support any additional load, a transistor with an even higher Beta may be required. Figure 93. Simple VREG Power Source Using NPN Pass Transistor The NPN collector can be powered from any voltage source that is a minimum 6 V above V–. This includes the cells that are being monitored, or an unregulated power supply. A 100 Ω, 100 nF RC decoupling network is recommended for the collector power connection to protect the NPN from transients. The emitter of the NPN must be bypassed with a 1 µF capacitor. Larger capacitance must be avoided because this increases the wake-up time of the ADBMS1818. Some attention must be given to the thermal charac- teristic of the NPN, as there can be significant heating with a high collector voltage. Improved Regulator Power Efficiency For improved efficiency when powering the ADBMS1818 from the cell stack, VREG can be powered from a dc-to-dc converter, rather than the NPN pass transistor. An ideal circuit is based on the LT8631 step-down regulator, as shown in Figure 94. A 100 Ω resistor is recommended between the battery stack and the LT8631 input, which prevents in-rush current when connecting to the stack and reduces conducted electromagnetic interference (EMI). The EN/UV pin must be connected to the DRIVE pin, which puts the LT8631 into a low power state when the ADBMS1818 is in the sleep state. Figure 94. VREG Powered From Cell Stack with High Efficiency Regulator INTERNAL PROTECTION AND FILTERING Internal Protection Features The ADBMS1818 incorporates various ESD safeguards to ensure robust performance. An equivalent circuit showing the specific protection structures is shown in Figure 95. Zener- like suppressors are shown with their nominal clamp voltage, and the unmarked diodes exhibit standard PN junction behavior. Filtering of Cell and GPIO Inputs The ADBMS1818 uses a Δ-Σ ADC, which includes a Δ-Σ modulator followed by a sinc3 finite impulse response (FIR) digital filter, which greatly relaxes input filtering requirements. Furthermore, the programmable oversampling ratio allows the user to determine the best trade-off between measurement speed and filter cutoff fre- quency. Even with this high order low-pass filter, fast transient noise can still induce some residual noise in measurements, especially in the faster conversion modes. This noise can be minimized by adding an RC, low-pass decoupling to each ADC input, which also helps reject potentially damaging high energy transients. Adding more than about 100 Ω to the ADC inputs begins to introduce a systematic error in the measurement, which can be improved by raising the filter capacitance or mathematically compensating in software with a calibration procedure. For situations that demand the highest level of battery voltage ripple rejection, grounded ca- pacitor filtering is recommended. This configuration has a series resistance and capacitors that decouple high frequency noise to V–. In systems where noise is less periodic or higher oversampling rates are in use, a differential capacitor filter structure is adequate. In this configuration there are series resistors to each input, but the capacitors connect between the adjacent C pins. However, the differential capacitor sections interact. As a result, the filter response is less consistent and results in less attenuation than predicted by the RC, by approximately a decade. Note that the capacitors only see one cell of applied voltage (thus smaller and lower cost) and tend to distribute transient energy uniformly across the IC (reducing stress events on the internal protection structure). Figure 96 shows the two methods schematically. ADC accuracy |
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