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CDCS503 数据表(PDF) 6 Page - Texas Instruments |
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CDCS503 数据表(HTML) 6 Page - Texas Instruments |
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6 / 16 page ![]() VDD 1 kW CDCS503-Q1 LVCMOS 1 kW 10 pF 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 f -InputFrequency-MHz i x1Mode x4Mode CDCS503-Q1 SCAS924B – MARCH 2012 – REVISED JUNE 2012 www.ti.com Figure 2. IDD vs Input Frequency, VCC = 3.3 V, SSC = 2%, Output Loaded With Test Load APPLICATION INFORMATION SSC MODULATION The exact implementation of the SSC modulation plays a vital role for the EMI reduction. The CDCS503-Q1 device uses a triangular modulation scheme implemented in a way that the modulation frequency depends on the VCO frequency of the internal PLL and the spread amount is independent from the VCO frequency. The modulation frequency can be calculated by using one of the below formulas chosen by frequency multiplication mode. FS = 0: fmod = fIN / 708 FS = 1: fmod = fIN / 620 PARAMETER MEASUREMENT INFORMATION Figure 3. Test Load 6 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): CDCS503-Q1 |
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