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LP8553 数据表(PDF) 2 Page - Texas Instruments |
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LP8553 数据表(HTML) 2 Page - Texas Instruments |
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2 / 41 page ![]() MCU LP8553 SW FB VLDO GNDs EN ISET VDDIO PWM SCLK SDA OUT1 OUT2 OUT3 OUT4 L1 D1 2.7V ± 22V FILTER +5V input rail FSET 15 éH VSYNC COUT CIN 10 éF 4.7 éF CVLDO 1 éF VDDIO reference voltage VSYNC signal 120 k # 100 nF RISET 1 éF FAULT Can be left floating if not used 39 pF VIN RFSET VBATT 5.5V ± 22V 10 ± 40V, 180 ± 400 mA 10 ± 25V, 180 mA LP8553 SNVS701B – SEPTEMBER 2011 – REVISED JANUARY 2014 www.ti.com DESCRIPTION (CONTINUED) Automatic PWM dimming at lower brightness values and current dimming at higher brightness values can be used to improve the optical efficiency. Internal EEPROM is used for storing the configuration data. This makes it possible to have minimum external component count and make the solution very small. LP8553 has safety features which make it possible to detect LED outputs with open or short fault. Low input voltage and boost over-current conditions are also monitored, and the chip is turned off when these events occur. Thermal de-rating function prevents overheating of the device by reducing backlight brightness when set temperature has been reached. LP8553 is available in TI's DSBGA 25-bump package. Typical Application for Low Input Voltage (2) Note: Separate 5V rail to VLDO can be also used to improve efficiency for applications with higher battery voltage. No power sequencing requirements between VIN/VLDO and VBATT. 2 Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated Product Folder Links: LP8553 |
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