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STDRIVE101TR 数据表(PDF) 9 Page - STMicroelectronics

部件名 STDRIVE101TR
功能描述  Triple half-bridge gate driver
PDF  32 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STDRIVE101TR 数据表(HTML) 9 Page - STMicroelectronics

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Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
tDELAY,SC
VDS monitoring protection
delay time
See Figure 6
200
ns
Thermal protection(6)
TSD
Thermal shutdown
temperature
150
165
°C
TSDhys
Thermal shutdown
hystreresis
30
°C
1. These timings are measured using INHx/INLx mode (refer to Figure 4). An extra time is added when the device works with
ENx/INx mode (refer to Figure 2 and Figure 3)
2. MT = max. (|ton(GLS) - toff(GLS)|, |ton(GHS) - toff(GHS)|, |toff(GLS) - ton(GHS)|, |toff(GHS) - ton(GLS)|).
3. MTCH is the difference between the ton and toff of a channel and the same timings of any other channel.
4. MDT = | tDTHL - tDTLH | see Figure 2.
5. MDTCH is the difference between the t DTHL and t DTLH of a channel and the same timings of any other channel.
6. Based on characterization data on a limited number of samples, not tested during production
Figure 2. INx timings and deadtime (ENx/INx mode)
toff(1)
toff(1)
Note:
(1) this propagation delay is typically 16 ns longer than the one measured in INH/INL driving mode (testing condition).
Figure 3. ENx timings (ENx/INx mode)
EN
GHS
GLS
Note:
(1) this propagation delay is typically 16 ns longer than the one measured in INH/INL driving mode (testing condition).
toff(1)
ton(1)
toff(1)
tDT + ton(1)
IN
STDRIVE101
Electrical characteristics
DS13472 - Rev 1
page 9/32



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