TLV2341IP datasheet(48/53 Pages) TI2

48 / 53 page

–

Figure 102. Compensation for Input Capacitance

TLV2341, TLV2341Y

LinCMOS

™ PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

APPLICATION INFORMATION

input characteristics (continued)

–

(a) NONINVERTING AMPLIFIER

(b) INVERTING AMPLIFIER

Figure 101. Guard-Ring Schemes

noise performance

The noise specifications in operational amplifiers circuits are greatly dependent on the current in the first-stage

differential amplifier. The low input bias-current requirements of the TLV2341 results in a very low noise current,

which is insignificant in most applications. This feature makes the device especially favorable over bipolar

devices when using values of circuit impedance greater than 50 k

Ω, since bipolar devices exhibit greater noise

currents.

feedback

Operational amplifier circuits nearly always

employ feedback, and since feedback is the first

prerequisite for oscillation, caution is appropriate.

Most oscillation problems result from driving

capacitive

loads

and

ignoring

stray

input

capacitance. A small-value capacitor connected

in parallel with the feedback resistor is an effective

remedy (see Figure 102). The value of this

capacitor is optimized empirically.

electrostatic-discharge protection

The TLV2341 incorporates an internal electro-

static-discharge (ESD)-protection circuit that

prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care

should be exercised, however, when handling these devices as exposure to ESD may result in the degradation

of the device parametric performance. The protection circuit also causes the input bias currents to be

temperature dependent and have the characteristics of a reverse-biased diode.

latch-up

Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLV2341 inputs

and output are designed to withstand – 100-mA surge currents without sustaining latch-up; however, techniques

should be used to reduce the chance of latch-up whenever possible. Internal protection diodes should not by

TLV2341IP 数据表(PDF) 48 Page - Texas Instruments

TLV2341IP 数据表(HTML) 48 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

数据表下载