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HT36 数据表(PDF) 6 Page - HOOYI SEMICONDUCTOR |
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HT36 数据表(HTML) 6 Page - HOOYI SEMICONDUCTOR |
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6 / 10 page ![]() 6 Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Source-Drain Diode Forward VDS - Drain - Source Voltage (V) Capacitance Gate Charge QG - Gate Charge (nC) Typical Operating Characteristics (Cont.) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 160 T j =175 oC T j =25 oC 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 6 7 8 9 10 V DS = 80V I DS = 80A -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 R ON @T j =25 oC: 4.5mΩ V GS = 10V I DS = 80A 0 5 10 15 20 25 30 35 40 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 Frequency=1MHz Crss Coss Ciss www.hooyi-semi.com HY3610P 22000 |
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